- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373088 > K9K2G08Q0M (SAMSUNG SEMICONDUCTOR CO. LTD.) ER 19C 19#12 SKT PLUG PDF資料下載
參數(shù)資料
| 型號： | K9K2G08Q0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | ER 19C 19#12 SKT PLUG |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 1/40頁 |
| 文件大?。?/td> | 641K |
| 代理商： | K9K2G08Q0M |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
FLASH MEMORY
1
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial issue
1. I
OL
(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
1. 5th cycle of ID is changed
: 40h --> 44h
1. Add WSOP Package Dimensions.
1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package
1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .
- min. 4016 --> 4036
1.
Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30
invalid blocks.
2. K9W4GXXU1M’s ID is changed
(Before)
(After)
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 37)
1. The min. Vcc value 1.8V devices is changed.
K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Device
2nd Cycle
3rd cycle
4th Cycle
5th Cycle
K9W4G08U1M
DCh
C3
15h
4Ch
K9W4G16U1M
CCh
C3
55h
4Ch
Device
2nd Cycle
3rd cycle
4th Cycle
5th Cycle
K9W4G08U1M
DAh
C1
15h
44h
K9W4G16U1M
CAh
C1
55h
44h
Draft Date
Aug. 30.2001
Nov. 5. 2001
Jan. 23. 2002
May. 29. 2002
Aug. 13. 2 002
Aug. 22. 2002
Nov. 07. 2002
Nov. 22. 2002
Mar. 6. 2003
相關PDF資料 |
PDF描述 |
|---|---|
| K9K2G16Q0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K4G08U1M | 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
| K9S1208V0M-SSB0 | 64M x 8 Bit SmartMedia Card |
| K9S1208V0 | 64MB & 128MB SmartMediaTM Card |
| K9D1G08V0M | 64MB & 128MB SmartMediaTM Card |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08Q0M-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。