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參數(shù)資料
| 型號： | K9K4G08U1M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位/ 512M × 8位NAND閃存 |
| 文件頁數(shù)： | 1/40頁 |
| 文件大?。?/td> | 839K |
| 代理商： | K9K4G08U1M |
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FLASH MEMORY
1
Preliminary
K9F2G08U0M K9F2G16U0M
K9K4G08U1M
Document Title
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial issue
1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
The min. Vcc value 1.8V devices is changed.
K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Few current value is changed.
Before Unit : us
After
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9F2G08Q0M-PCB0,PIB0
K9F2G08U0M-PCB0,PIB0
K9F2G16U0M-PCB0,PIB0
K9F2G16Q0M-PCB0,PIB0
K9F2GXXQ0M
K9F2GXXU0M
Typ.
Max.
Typ.
Max.
I
SB
2
20
100
20
100
I
LI
-
±
20
-
±
20
I
LO
-
±
20
-
±
20
K9F2GXXQ0M
K9F2GXXU0M
Typ.
Max.
Typ.
Max.
I
SB
2
10
50
10
50
I
LI
-
±
10
-
±
10
I
LO
-
±
10
-
±
10
Draft Date
Sep. 19.2001
Nov. 22. 2002
Mar. 6.2003
Apr. 2. 2003
Apr. 9. 2003
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| K9D1G08V0M | 64MB & 128MB SmartMediaTM Card |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K4G16Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K4G16U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K8G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
| K9K8G08U0A-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
| K9K8G08U0A-PCB0T00 | 制造商:Samsung SDI 功能描述: |
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