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參數(shù)資料
| 型號： | K9F6408U0B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory |
| 中文描述： | 8米× 8位NAND閃存 |
| 文件頁數(shù)： | 1/27頁 |
| 文件大小： | 416K |
| 代理商： | K9F6408U0B |
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K9F6408U0B-TCB0, K9F6408U0B-TIB0
FLASH MEMORY
1
Document Title
8M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
Remark
Preliminary
History
Initial issue.
1. Changed endurance : 1 million -> 100K program/erase cycles
1. Changed don’t care mode in address cycles
- *X can be "High" or "Low" => *L must be set to "Low"
2. Explain how pointer operation works in detail.
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
4. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
1.Powerup sequence is added
: Recovery time of minimum 1
μ
s is required before internal circuit gets
ready for any command sequences
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. AC parameter tAR1 value : 100ns --> 20ns
V
CC
WP
High
≈
≈
~ 2.5V
~ 2.5V
≈
WE
1
μ
Draft Date
July 17th 2000
Nov. 20th 2000
Jul. 25th. 2001
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F8008W0M- | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F8008W0M-TCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F8008W0M-TIB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9K1208U0A-YCB0 | TV 16C 16#16 SKT RECP |
| K9K1208U0A-YIB0 | 64M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F6408U0B-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0B-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
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