參數(shù)資料
型號(hào)： K9F8008W0M-TIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 100萬(wàn)× 8位NAND快閃記憶體
文件頁(yè)數(shù)： 1/25頁(yè)
文件大?。?/td> 445K
代理商： K9F8008W0M-TIB0
K9F8008W0M-TCB0, K9F8008W0M-TIB0
FLASH MEMORY
1
Document Title
1M x 8 bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
1.1
1.2
1.3
1.4
Remark
Advance
Preliminary
Final
Final
Final
Final
History
Data Sheet 1997
Data Sheet 1998
1. Changed t
BERS
parameter : 5ms(Typ.)
→
2ms(Typ.)
10ms(Max.)
→
4ms(Max.)
2. Changed t
PROG
parameter : 1.5ms(Max.)
→
1.0ms(Max.)
Data sheet 1998
1. Cjanged DC and Operating Characteristics
Data Sheet 1999
1) Added CE don’ care mode during the data-loading and reading
1) Revised real-time map-out algorithm(refer to technical notes)
Changed device name
- KM29W8000T -> K9F8008W0M-TCB0
- KM29W8000IT -> K9F8008W0M-TIB0
Parameter
Vcc=2.7V~3.6V
Vcc=3.6V~5.5V
Unit
Typ
Max
Typ
Max
Operating
Current
Burst Read
10
→
5
20
→
10
15
→
10
30
→
20
mA
Program
10
→
5
20
→
10
15
→
10
30
→
20
Eraase
10
→
5
20
→
10
15
→
10
30
→
20
Stand-by Current (CMOS)
5
→
10
50
10
100
→
50
μ
A
Input Leakage Current
-
10
→ ±
10
-
10
→ ±
10
Output Leakage Current
-
10
→ ±
10
-
10
→ ±
10
Draft Date
April 10th 1997
April 10th 1998
July 14th 1998
April 10th 1999
July 23th 1999
Sep. 15th 1999
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