參數(shù)資料
型號: K9F5608U0M-
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M x 8 Bit NAND Flash Memory
中文描述: 32M的× 8位NAND閃存
文件頁數(shù): 11/26頁
文件大?。?/td> 353K
代理商: K9F5608U0M-
K9F5608U0M-YCB0,K9F5608U0M-YIB0
FLASH MEMORY
11
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
Block Replacement
When the error happens with page "a" of Block "A", try
to write the data into another Block "B" from an exter-
nal buffer. Then, prevent further system access to
Block "A" (by creating a "invalid block" table or other
appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
NAND Flash Technical Notes
(Continued)
Page a
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608UOC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608X0D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory