參數(shù)資料
型號(hào)： K9F5608U0M-
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32M x 8 Bit NAND Flash Memory
中文描述： 32M的× 8位NAND閃存
文件頁(yè)數(shù)： 1/26頁(yè)
文件大?。?/td> 353K
代理商： K9F5608U0M-
K9F5608U0M-YCB0,K9F5608U0M-YIB0
FLASH MEMORY
1
Document Title
32M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Remark
Advanced
Information
Advanced
Information
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
Initial issue.
Revised real-time map-out algorithm(refer to technical notes)
1. Changed device name
i. KM29U256T -> K9F5608U0M-YCB0
ii. KM29U256IT -> K9F5608U0M-YIB0
1. Changed tWP AC Timing
- If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise
tWP may be minimum 25ns.
2. Changed Sequential Row Read operation
- The Sequential Read 1 and 2 operation is allowed only within a block
3. Changed invalid block(s) marking method prior to shipping
- The invalid block(s) information is written the 1st or 2nd page of the
invalid block(s) with 00h data
--->The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has 00h data at the column address of 517.
4. Added a new card-type package : K9S5608U0M-MCB0
1. Changed Endurance : 1million -> 100K Program/Erase Cycles
1. Changed package name
: K9S5608U0M-MCB0 ->K9F5608U0M-MCB0(Micro Flash Card)
2. Changed invalid block(s) marking method prior to shipping
- The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has
00h data
at the column address of 517.
--->The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has
non-FFh
data at the column address of 517.
1. Removed Micro Flash Card
2. Changed SE pin description
- SE is recommended to coupled to GND or Vcc and should not be
toggled during reading or programming.
1. Explain how pointer operation works in detail.
2. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
3. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
Draft Date
April. 10th 1999
July. 23th 1999
Sep. 15th 1999
Mar. 21th 2000
Apr. 7th 2000
Apr. 29th 2000
July 17th 2000
Nov. 20th 2000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608UOC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608X0D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
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