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參數(shù)資料
| 型號： | K9F4008W0A-TCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| 中文描述： | 為512k × 8位NAND快閃記憶體 |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 318K |
| 代理商： | K9F4008W0A-TCB0 |
K9F4008W0A-TCB0, K9F4008W0A-TIB0
FLASH MEMORY
8
AC Characteristics for Operation
NOTE
: 1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
15
μ
s
ALE to RE Delay(ID Delay)
t
AR1
20
-
ns
ALE to RE Delay(Read Cycle)
t
AR2
250
-
ns
CE low to RE low (ID read)
t
CR
250
-
ns
CLE to RE Delay
t
CLR
50
-
ns
Ready to RE Low
t
RR
100
-
ns
RE Pulse Width
t
RP
60
-
ns
WE High to Busy
t
WB
-
200
ns
Read Cycle Time
t
RC
120
-
ns
RE Access Time
t
REA
-
50
ns
RE High to Output Hi-Z
t
RHZ
0
30
ns
CE High to Output Hi-Z
t
CHZ
-
50
ns
RE High Hold Time
t
REH
40
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
100+tr(R/B)
(1)
ns
RE Low to Status Output
t
RSTO
-
60
ns
CE Low to Status Output
t
CSTO
-
70
ns
WE High to RE Low
t
WHR
50
-
ns
RE access time(Read ID)
t
WHRID
100
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
5/10/500
μ
s
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
t
CLS
50
-
ns
CLE Hold Time
t
CLH
50
-
ns
CE Setup Time
t
CS
50
-
ns
CE Hold Time
t
CH
50
-
ns
WE Pulse Width
t
WP
60
-
ns
ALE Setup Time
t
ALS
50
-
ns
ALE Hold Time
t
ALH
50
-
ns
Data Set-up Time
t
DS
40
-
ns
Data Hold Time
t
DH
20
-
ns
Write Cycle Time
t
WC
120
-
ns
WE High Hold Time
t
WH
40
-
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F4008W0A-TIB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4G08U0M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9F5608Q0C | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F4008W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F4G08U0A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F4G08U0A-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F4G08U0A-PCB000 | 制造商:Samsung Semiconductor 功能描述: |
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