參數(shù)資料
型號(hào)： K9F4008W0A-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 為512k × 8位NAND快閃記憶體
文件頁(yè)數(shù)： 22/24頁(yè)
文件大?。?/td> 318K
代理商： K9F4008W0A-TCB0
Package Dimensions
FLASH MEMORY
22
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a frame program, erase or read seek
completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or
a random read is begin after address loading. It returns to high when the internal controller has finished the operation. The pin is an
open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and cur-
rent drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 10). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp
t
I
Rp(ohm)
Fig 10 Rp vs tr ,tf & Rp vs ibusy
Ibusy
tr
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
ibusy
Rp(min) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
2.0V
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
96
tf
189
290
381
4.2
4.2
4.2
4.2
3.3
1.65
1.1
0.825
0.8V
相關(guān)PDF資料
PDF描述
K9F4008W0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F4008W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F4G08U0A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F4G08U0A-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F4G08U0A-PCB000 制造商:Samsung Semiconductor 功能描述:
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