參數(shù)資料
型號： K9F3208W0A-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 4米× 8位NAND閃存
文件頁數(shù)： 6/27頁
文件大?。?/td> 558K
代理商： K9F3208W0A-TCB0
K9F3208W0A-TCB0, K9F3208W0A-TIB0
FLASH MEMORY
6
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
Q+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to +7.0
V
Temperature Under Bias
K9F3208W0A-TCB0
T
BIAS
-10 to +125
°
C
K9F3208W0A-TIB0
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Vcc=2.7V ~ 3.6V
Vcc=3.6V ~ 5.5V
Unit
Min
Typ
Max
Min
Typ
Max
Operating
Current
Sequential Read
I
CC
1
tRC=80ns, CE=V
IL
, I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
25
40
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=SE=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=SE=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 5.5V
-
-
±
10
±
10
-
-
±
10
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 5.5V
-
-
-
-
Input High Voltage
V
IH
I/O pins
2.0
-
V
CC
Q+0.3
3.0
-
V
CC
Q+0.5
V
Except I/O pins
2.0
-
V
CC
+0.3
3.0
-
V
CC
+0.5
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.6
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B) V
OL
=0.4V
8
10
-
8
10
-
mA
RECOMMENDED OPERATING
CONDITIONS
(Voltage reference to GND, K9F3208W0A-TCB0:T
A
=0 to 70
°
C, K9F3208W0A-TIB0:T
A
=-40 to 85
°
C)
NOTE
: 1. Vcc and VccQ pins are separated each other.
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
-
5.5
V
Supply Voltage
V
CC
Q
2.7
-
5.5
V
Supply Voltage
V
SS
0
0
0
V
相關PDF資料
PDF描述
K9F3208W0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4008W0A 512K x 8 bit NAND Flash Memory
K9F4008W0A- 512K x 8 bit NAND Flash Memory
K9F4008W0A-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4008W0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
相關代理商/技術參數(shù)
參數(shù)描述
K9F3208W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory
K9F4008W0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
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