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參數(shù)資料
| 型號： | K9F2816U0C-HIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 15/33頁 |
| 文件大?。?/td> | 583K |
| 代理商： | K9F2816U0C-HIB0 |
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K9F2816U0C-DCB0,DIB0
FLASH MEMORY
15
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
1
2
{
1st
(n-1)th
nth
(page)
{
an error occurs.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2816U0C-PCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808Q0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-DCB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816U0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2816U0C-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2816U0C-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2816U0C-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816U0C-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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