參數(shù)資料
型號(hào)： K9F2816U0C-HIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory
中文描述： 1,600 × 8位NAND閃存
文件頁(yè)數(shù)： 10/33頁(yè)
文件大?。?/td> 583K
代理商： K9F2816U0C-HIB0
K9F2816U0C-DCB0,DIB0
FLASH MEMORY
10
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F28XXQ0C(1.8V)
K9F28XXU0C(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
8
15
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
20
Erase
I
CC
3
-
-
8
15
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
2.0
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F28XXQ0C :I
OH
=-100
μ
A
K9F28XXU0C :I
OH
=-400
μ
A
V
CC
Q-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F28XXQ0C :I
OL
=100uA
K9F28XXU0C :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F28XXQ0C :V
OL
=0.1V
K9F28XXU0C :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F28XXX0C-XCB0
:
T
A
=0 to 70
°
C, K9F28XXX0C-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F28XXQ0C(1.8V)
K9F28XXU0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.7
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.7
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F28XXQ0C(1.8V)
K9F28XXU0C(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F28XXX0C-XCB0
T
BIAS
-10 to +125
°
C
K9F28XXX0C-XIB0
-40 to +125
Storage Temperature
K9F28XXX0C-XCB0
T
STG
-65 to +150
°
C
K9F28XXX0C-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9F2816U0C-PCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816Q0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816Q0C-DIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-DIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2816U0C-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816U0C-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2816U0C-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2816U0C-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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