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參數(shù)資料
| 型號： | K9F2808Q0C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:46; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| 中文描述： | 1,600 × 8位，8米× 16位NAND閃存 |
| 文件頁數(shù)： | 12/33頁 |
| 文件大小： | 583K |
| 代理商： | K9F2808Q0C |
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K9F2816U0C-DCB0,DIB0
FLASH MEMORY
12
K9F2808U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2816U0C-YCB0,YIB0
K9F2808U0C-VCB0,VIB0
AC Timing Characteristics for Command / Address / Data Input
NOTE
:
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
K9F2808Q0C
K9F2808U0C
Unit
Min
Max
Min
Max
CLE Set-up Time
t
CLS
0
-
0
-
ns
CLE Hold Time
t
CLH
10
-
10
-
ns
CE Setup Time
t
CS
0
-
0
-
ns
CE Hold Time
t
CH
10
-
10
-
ns
WE Pulse Width
t
WP
40
-
25
-
ns
ALE Setup Time
t
ALS
0
-
0
-
ns
ALE Hold Time
t
ALH
10
-
10
-
ns
Data Setup Time
t
DS
20
-
20
-
ns
Data Hold Time
t
DH
10
-
10
-
ns
Write Cycle Time
t
WC
60
-
45
-
ns
WE High Hold Time
t
WH
20
-
15
-
ns
AC Characteristics for Operation
NOTE
:
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
K9F2808Q0C
K9F2808U0C
Unit
Min
Max
Min
Max
Data Transfer from Cell to Register
t
R
-
10
-
10
μ
s
ALE to RE Delay
t
AR
10
-
10
-
ns
CLE to RE Delay
t
CLR
10
-
10
-
ns
Ready to RE Low
t
RR
20
-
20
-
ns
RE Pulse Width
t
RP
40
-
25
-
ns
WE High to Busy
t
WB
-
100
-
100
ns
Read Cycle Time
t
RC
60
-
50
-
ns
CE Access Time
t
CEA
-
55
-
45
ns
RE Access Time
t
REA
-
40
-
30
ns
RE High to Output Hi-Z
t
RHZ
-
30
-
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
-
20
ns
RE or CE High to Output hold
t
OH
15
-
15
-
ns
RE High Hold Time
t
REH
20
-
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
0
-
ns
WE High to RE Low
t
WHR
60
-
60
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
5/10/500
(1)
-
5/10/500
(1)
μ
s
K9F2808U0C-
Y,P,V,F only
Last RE High to Busy
(at sequential read)
t
RB
-
100
-
100
ns
CE High to Ready(in case of inter-
ception by CE at read)
t
CRY
-
50 +tr(R/B)
(3)
-
50 +tr(R/B)
(3)
ns
CE High Hold Time(at the last
serial read)
(2)
t
CEH
100
-
100
-
ns
相關(guān)PDF資料 |
PDF描述 |
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| K9F2816Q0C-HCB0 | DB50 MALE/ DB50 MALE 2FT |
| K9F2816Q0C-HIB0 | INTERNAL SNGL-DRV LOOP CABLE C |
| K9F2816U0C-PIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2816U0C-HCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F3208W0A- | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808Q0C-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2808Q0C-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808Q0C-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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