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參數(shù)資料
| 型號(hào)： | K9F2808Q0C-HCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 9/31頁(yè) |
| 文件大?。?/td> | 774K |
| 代理商： | K9F2808Q0C-HCB0 |
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FLASH MEMORY
9
K9F2808U0C
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
10
20
mA
Program
I
CC
2
-
-
10
20
Erase
I
CC
3
-
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
Input High Voltage
V
IH*
I/O pins
2.0
-
V
CCQ
+0.3
V
Except I/O pins
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2808U0C-XCB0
:
T
A
=0 to 70
°
C, K9F2808U0C-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
V
CCQ
-0.6 to + 4.6
Temperature Under Bias
K9F2808U0C-XCB0
T
BIAS
-10 to +125
°
C
K9F2808U0C-XIB0
-40 to +125
Storage Temperature
K9F2808U0C-XCB0
T
STG
-65 to +150
°
C
K9F2808U0C-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0C-F | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-FCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-FIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808Q0C-HIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HCB0 | 16M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808Q0C-HIB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A- | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A-YCB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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