- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373086 > K8D1716UTC-FI08 (SAMSUNG SEMICONDUCTOR CO. LTD.) 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K8D1716UTC-FI08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 1,600位（200萬x8/1M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 20/41頁 |
| 文件大小： | 684K |
| 代理商： | K8D1716UTC-FI08 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁
FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
20
Table 12. Common Flash Memory Interface Code
Description
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Query Unique ASCII string "QRY"
10H
11H
12H
20H
22H
24H
0051H
0052H
0059H
Primary OEM Command Set
13H
14H
26H
28H
0002H
0000H
Address for Primary Extended Table
15H
16H
2AH
2CH
0040H
0000H
Alternate OEM Command Set (00h = none exists)
17H
18H
2EH
30H
0000H
0000H
Address for Alternate OEM Extended Table (00h = none exists)
19H
1AH
32H
34H
0000H
0000H
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1BH
36H
0027H
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1CH
38H
0036H
Vpp Min. voltage(00H = no Vpp pin present)
1DH
3AH
0000H
Vpp Max. voltage(00H = no Vpp pin present)
1EH
3CH
0000H
Typical timeout per single byte/word write 2
N
us
1FH
3EH
0004H
Typical timeout for Min. size buffer write 2
N
us(00H = not supported)
20H
40H
0000H
Typical timeout per individual block erase 2
N
ms
21H
42H
000AH
Typical timeout for full chip erase 2
N
ms(00H = not supported)
22H
44H
0000H
Max. timeout for byte/word write 2
N
times typical
23H
46H
0005H
Max. timeout for buffer write 2
N
times typical
24H
48H
0000H
Max. timeout per individual block erase 2
N
times typical
25H
4AH
0004H
Max. timeout for full chip erase 2
N
times typical(00H = not supported)
26H
4CH
0000H
Device Size = 2
N
byte
27H
4EH
0015H
Flash Device Interface description
28H
29H
50H
52H
0002H
0000H
Max. number of byte in multi-byte write = 2
N
2AH
2BH
54H
56H
0000H
0000H
Number of Erase Block Regions within device
2CH
58H
0002H
Erase Block Region 1 Information
2DH
2EH
2FH
30H
5AH
5CH
5EH
60H
0007H
0000H
0020H
0000H
Erase Block Region 2 Information
31H
32H
33H
34H
62H
64H
66H
68H
001EH
0000H
0000H
0001H
Erase Block Region 3 Information
35H
36H
37H
38H
6AH
6CH
6EH
70H
0000H
0000H
0000H
0000H
Erase Block Region 4 Information
39H
3AH
3BH
3CH
72H
74H
76H
78H
0000H
0000H
0000H
0000H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K8D1716UTC-FI09 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC09 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D1716UTC-FI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。