參數(shù)資料
型號: K8D1716UTC-FC09
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
中文描述: 1,600位(200萬x8/1M x16)的雙銀行NOR閃存
文件頁數(shù): 16/41頁
文件大小: 684K
代理商: K8D1716UTC-FC09
FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
16
Table 10. Block Group Address (Top Boot Block)
Block Group
Block Address
Block
A19
A18
A17
A16
A15
A14
A13
A12
BGA0
0
0
0
0
0
X
X
X
BA0
BGA1
0
0
0
0
1
X
X
X
BA1 to BA3
1
0
1
1
BGA2
0
0
1
X
X
X
X
X
BA4 to BA7
BGA3
0
1
0
X
X
X
X
X
BA8 to BA11
BGA4
0
1
1
X
X
X
X
X
BA12 to BA15
BGA5
1
0
0
X
X
X
X
X
BA16 to BA19
BGA6
1
0
1
X
X
X
X
X
BA20 to BA23
BGA7
1
1
0
X
X
X
X
X
BA24 to BA27
BGA8
1
1
1
0
0
X
X
X
BA28 to BA30
1
1
1
0
1
X
X
X
1
1
1
1
0
X
X
X
BGA9
1
1
1
1
1
0
0
0
BA31
BGA10
1
1
1
1
1
0
0
1
BA32
BGA11
1
1
1
1
1
0
1
0
BA33
BGA12
1
1
1
1
1
0
1
1
BA34
BGA13
1
1
1
1
1
1
0
0
BA35
BGA14
1
1
1
1
1
1
0
1
BA36
BGA15
1
1
1
1
1
1
1
0
BA37
BGA16
1
1
1
1
1
1
1
1
BA38
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K8D1716UTC-FI07 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
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相關代理商/技術參數(shù)
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K8D1716UTC-FI07 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-FI09 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PC07 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC-PC08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory