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參數(shù)資料
| 型號： | K8D1716UTC-FC09 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 1,600位（200萬x8/1M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 15/41頁 |
| 文件大小： | 684K |
| 代理商： | K8D1716UTC-FC09 |
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FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
15
Figure 9. Block Group Protection & Unprotection Algorithms
Block Protect
Algorithm
Set up Block Group
address
Block Group Protect:
Write 60H to Block
Group address with
A6=0,A1=1
A0=0
Wait 150
μ
s
Verify Block Group
Protect:Write 40H to
Block Group address
with A6=0,
A1=1,A0=0
Read from
Block Group address
with A6=0,
A1=1,A0=0
Data=01h
Protect another
Block Group
Remove V
ID
from RESET
Write RESET
command
END
Wait 1
μ
s
First Write
Cycle=60h
Temporary Block Group
Unprotect Mode
Block Group Unprotect
Write 60H
with
A6=1,A1=1
A0=0
Wait 15ms
Verify Block Group
Unprotect:Write 40H to
Block Group address
with A6=1,
A1=1,A0=0
Read from
Block Group address
with A6=1,
A1=1,A0=0
Data=00h
Last Block Group
verified
Remove VID
from RESET
Write RESET
command
END
No
Increment
COUNT
COUNT
=1000
Device failed
No
Yes
Yes
No
No
Yes
Algorithm
Increment
COUNT
COUNT
=25
Device failed
No
Yes
No
All Block Groups
Protected
No
Block Group <i>, i= 0
START
COUNT = 1
RESET=V
ID
Yes
Yes
Yes
No
Note :
All blocks must be protected before unprotect operation is executing.
Block Group
Protection
Yes
No
Yes
Set up next Block
Group address
Reset
COUNT=1
Block Unprotect
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K8D1716UTC-FI07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FI08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FI09 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC07 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC08 | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K8D1716UTC-FI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-FI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-PC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
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