參數(shù)資料
型號： K7R641884M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 2Mx36 & 4Mx18 QDRTM II b4 SRAM
中文描述： 2Mx36
文件頁數(shù)： 9/18頁
文件大?。?/td> 352K
代理商： K7R641884M
- 9 -
Rev 0.5
Oct. 2004
2Mx36 & 4Mx18 QDR
TM
II b4 SRAM
K7R643684M
K7R641884M
Preliminary
DC ELECTRICAL CHARACTERISTICS
(V
DD
=1.8V
±
0.1V, T
A
=0
°
C to +70
°
C)
Notes:
1. Minimum cycle. I
OUT
=0mA.
2. |I
OH
|=(V
DDQ
/2)/(RQ/5)
±
15% for 175
≤
RQ
≤
350
. |I
OL
|=(V
DDQ
/2)/(RQ/5)
±
15% for 175
≤
RQ
≤
350
.
3. Minimum Impedance Mode when ZQ pin is connected to V
DDQ
.
4. Operating current is calculated with 50% read cycles and 50% write cycles.
5. Standby Current is only after all pending read and write burst opeactions are completed.
6. Programmable Impedance Mode.
7. These are DC test criteria. DC design criteria is V
REF
±
50mV. The AC V
IH
/V
IL
levels are defined separately for measuring
timing parameters.
8. V
IL
(Min)DC=
-
0.3V, V
IL
(Min)AC=-1.5V(pulse width
≤
3ns).
9. V
IH
(Max)DC=
V
DDQ
+0.3, V
IH
(Max)AC=
V
DDQ
+0.85V(pulse width
≤
3ns).
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
NOTES
Input Leakage Current
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DDQ
-2
+2
μ
A
μ
A
Output Leakage Current
I
OL
Output Disabled,
-2
+2
Operating Current (x36): DDR
I
CC
V
DD
=Max , I
OUT
=0mA
Cycle Time
≥
t
KHKH
Min
-30
-
TBD
mA
1,4
-25
-
TBD
-20
-
TBD
-16
-
TBD
Operating Current (x18): DDR
I
CC
V
DD
=Max , I
OUT
=0mA
Cycle Time
≥
t
KHKH
Min
-30
-
TBD
mA
1,4
-25
-
TBD
-20
-
TBD
-16
-
TBD
Standby Current(NOP): DDR
I
SB1
Device deselected,
I
OUT
=0mA, f=Max,
All Inputs
≤
0.2V or
≥
V
DD
-0.2V
-30
-
TBD
mA
1,5
-25
-
TBD
-20
-
TBD
-16
-
TBD
Output High Voltage
V
OH1
V
DDQ
/2-0.12 V
DDQ
/2+0.12
V
2,6
Output Low Voltage
V
OL1
V
DDQ
/2-0.12 V
DDQ
/2+0.12
V
2,6
Output High Voltage
V
OH2
I
OH
=-1.0mA
V
DDQ
-0.2
V
DDQ
V
3
Output Low Voltage
V
OL2
I
OL
=1.0mA
V
SS
0.2
V
3
Input Low Voltage
V
IL
-0.3
V
REF
-0.1
V
7,8
Input High Voltage
V
IH
V
REF
+0.1
V
DDQ
+0.3
V
7,9
ABSOLUTE MAXIMUM RATINGS*
*Note:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. V
DDQ
must not exceed V
DD
during normal operation.
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.5 to 2.9
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
-0.5 to V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.5 to V
DD+
0.3
V
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
V
DD
1.7
1.9
V
V
DDQ
1.4
1.9
V
Reference
Voltage
V
REF
0.68
0.95
V
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