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參數(shù)資料
| 型號： | K7R641884M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx36 & 4Mx18 QDRTM II b4 SRAM |
| 中文描述： | 2Mx36 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 352K |
| 代理商： | K7R641884M |
- 1 -
Rev 0.5
Oct. 2004
2Mx36 & 4Mx18 QDR
TM
II b4 SRAM
K7R643684M
K7R641884M
Preliminary
Document Title
2Mx36-bit, 4Mx18-bit QDR
TM
II b4 SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial document.
1. Update AC timing characteristics.
2. Change the JTAG instruction coding.
1. Change the AC timing characteristics. (-25/-20 parts)
2. Correct the overshoot and undershoot timing diagrams.
3. Change the JTAG Block diagrams.
4. Update the Boundary scan exit order.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Add the Power-on Sequence specification
1. Correct the pin name table
Draft Date
Sep 14, 2002
Oct. 24, 2002
Feb. 18, 2003
Mar. 20, 2003
Aug. 16, 2004
Oct. 18, 2004
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