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參數(shù)資料
| 型號： | K7P401822B-HC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SENSOR DIFF VACUUM GAGE 1PSI |
| 中文描述： | 128K × 36至 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 240K |
| 代理商： | K7P401822B-HC25 |
Rev 1.0
K7P401822M
128Kx36 & 256Kx18 SRAM
- 1 -
K7P403622M
Dec. 1998
Document Title
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 1.0
Remark
Preliminary
Preliminary
Preliminary
Final
History
- Preliminary specification release
- Change specification format.
No change was made in parameters.
- Updated I
DD
, I
SB
and Input High Level.
Updated t
KHKL
, t
KLKH
, t
KHQX
, t
KHQX1
and AC Test Conditions.
For JTAG, updated Vendor Definition and added t
SVCH
/t
CHSX.
- Final specification release
Draft Date
April, 1997
Jan. 1998
Dec. 1998
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| K7P401822M-H20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
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