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參數(shù)資料
| 型號： | K7P801811B-HC27 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 & 512Kx18 Synchronous Pipelined SRAM |
| 中文描述： | 256Kx36 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 258K |
| 代理商： | K7P801811B-HC27 |
Preliminary
Rev 4.0
K7P801811B
256Kx36 & 512Kx18 SRAM
K7P803611B
Aug. 2002
- 1 -
Document Title
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
Revision History
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Remark
Preliminary
Final
Final
Final
Final
History
- Initial Document.
- Final specification release
- Absolute Maximum Rating VDDQ changed from 2.825V to 2.4V.
- Function Description modified
- Add -HC27 part (Part Number, Idd, AC Characteristics)
Draft Date
Feb. 2001
May. 2001
Jan. 2002
Mar. 2002
Aug. 2002
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| K7P801811B-HC30 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous Pipelined SRAM |
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