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參數(shù)資料
| 型號： | K7N803645M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K X 36 & 512K X 18 PIPELINED N-T RAM - TM |
| 中文描述： | 256 × 36 |
| 文件頁數(shù)： | 7/18頁 |
| 文件大小： | 282K |
| 代理商： | K7N803645M |
K7N803645M
K7N801845M
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 7 -
Rev 3.0
November 1999
STATE DIAGRAM FOR N
t
RAM
TM
BEGIN
WRITE
BURST
WRITE
BEGIN
READ
WRITE
DS
READ
DS
BURST
READ
WRITE
DS
READ
DS
READ
D
WRTE
B
DESELECT
B
R
B
W
READ
WRITE
BURST
BURST
Notes :
1. An IGNORE CLOCK EDGE cycle is not shown is the above diagram. This is because CKE HIGH only blocks the clock(CLK) input and does
not change the state of the device.
2. States change on the rising edge of the clock(CLK)
COMMAND
ACTION
DS
DESELECT
READ
BEGIN READ
WRITE
BEGIN WRITE
BURST
BEGIN READ
BEGIN WRITE
CONTINUE DESELECT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7N801845M | 256K X 36 & 512K X 18 PIPELINED N-T RAM - TM |
| K7P403622B-HC20 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| K7P403622B-HC25 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| K7P403622B | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| K7P403622B-HC16 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7N803649B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Pipelined NtRAM |
| K7N803649B-QC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
| K7-P | 制造商:MITSUMI 制造商全稱:Mitsumi Electronics, Corp. 功能描述:Adjustable Type Coils |
| K7P161866A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
| K7P161866A-HC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 AND 1Mx18 Synchronous Pipelined SRAM |
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