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參數(shù)資料
| 型號： | K7J161882B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36 & 1Mx18 DDR II SIO b2 SRAM |
| 中文描述： | 512Kx36 |
| 文件頁數(shù)： | 12/17頁 |
| 文件大小： | 374K |
| 代理商： | K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
- 12 -
Rev 3.1
July. 2004
K7J163682B
K7J161882B
APPLICATION INRORMATION
THERMAL RESISTANCE
Note
: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. T
J
=T
A
+ P
D
x
θ
JA
PRMETER
SYMBOL
TYP
Unit
°
C
/W
°
C
/W
NOTES
Junction to Ambient
θ
JA
θ
JC
17.1
Junction to Case
3.3
PIN CAPACITANCE
Note
: 1. Parameters are tested with RQ=250
and V
DDQ
=1.5V.
2. Periodically sampled and not 100% tested.
PRMETER
SYMBOL
TESTCONDITION
Typ
MAX
Unit
NOTES
Address Control Input Capacitance
C
IN
V
IN
=0V
4
5
pF
Input and Output Capacitance
C
OUT
V
OUT
=0V
6
7
pF
Clock Capacitance
C
CLK
-
5
6
pF
SRAM#1
D
SA
R W BW
0
Q
K
CQ
K
C C
SRAM#4
R
Vt
Vt
Vt
R=50
Vt=V
REF
Vt
Vt
R
R=250
BW
1
D
SA
RW BW
0
Q
K
C C
BW
1
K
Data In
Data Out
Address
R
W
BW
Return CLK
Source CLK
Return CLK
Source CLK
MEMORY
CONTROLLER
CQ
ZQ R=250
CQ
CQ
ZQ
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
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| K7J161882B-FC30000 | 制造商:Samsung SDI 功能描述:16MSYNC |
| K7J161882B-FC30T00 | 制造商:Samsung Semiconductor 功能描述:16MSYNC DDRII, SEPARATE I/O SRAM 1MX18FBGA, T/R - Tape and Reel |
| K7J161882B-FI25000 | 制造商:Samsung Semiconductor 功能描述:16MSYNC DDRII, SEPARATE I/O SRAM 1MX18FBGA - Bulk |
| K7J161882B-FI25T00 | 制造商:Samsung Semiconductor 功能描述:16MSYNC DDRII, SEPARATE I/O SRAMX18FBGA, T/R - Tape and Reel |
| K7J163682B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDR II SIO b2 SRAM |
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