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參數(shù)資料
| 型號(hào)： | K6R4008V1B-C12 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS SRAM |
| 中文描述： | CMOS SRAM的 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 214K |
| 代理商： | K6R4008V1B-C12 |
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
CMOS SRAM
PRELIMINARY
Rev 2.2
May 1999
- 6 -
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R4008V1B-10
K6R4008V1B-12
K6R4008V1B-15
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
10
-
12
-
15
-
ns
Chip Select to End of Write
t
CW
7
-
8
-
10
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
7
-
8
-
10
-
ns
Write Pulse Width(OE High)
t
WP
7
-
8
-
10
-
ns
Write Pulse Width(OE Low)
t
WP1
10
-
12
-
15
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
5
0
6
0
7
ns
Data to Write Time Overlap
t
DW
5
-
6
-
7
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
NOTES
(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
OH
or
V
OL
levels.
4. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to
device.
5. Transition is measured
±
200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
IL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
CS
Address
OE
Data ou
t
t
AA
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
RC
t
OE
t
CO
t
PU
t
PD
Valid Data
t
HZ(3,4,5)
50%
50%
V
CC
Current
I
CC
I
SB
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| K6R4008V1B-C15 | CMOS SRAM |
| K6R4008V1B-I10 | CMOS SRAM |
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| K6R4008V1B-I15 | CMOS SRAM |
| K6R4008V1D | 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
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| K6R4008V1B-C15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1B-I10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1B-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1B-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1C-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. |
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