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參數(shù)資料
| 型號(hào)： | K6R4008V1B-C12 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS SRAM |
| 中文描述： | CMOS SRAM的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 214K |
| 代理商： | K6R4008V1B-C12 |
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
CMOS SRAM
PRELIMINARY
Rev 2.2
May 1999
- 2 -
512K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)
GENERAL DESCRIPTION
The K6R4008V1B is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
K6R4008V1B uses 8 common input and output lines and has
an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG
′
s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
high-speed
system
K6R4008V1B is packaged in a 400 mil 36-pin plastic SOJ or
TSOP(II) forward or 44-pin plastic TSOP(II) forward.
FEATURES
Fast Access Time 10,12,15ns(Max.)
Low Power Dissipation
Standby (TTL) : 50mA(Max.)
(CMOS) : 10mA(Max.)
1.2mA(Max.)- L-Ver.
Operating K6R4008V1B-10 : 205mA(Max.)
K6R4008V1B-12 : 200mA(Max.)
K6R4008V1B-15 : 195mA(Max.)
Single 3.3
±
0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
2V Minimum Data Retention ; L-Ver. only
Center Power/Ground Pin Configuration
Standard Pin Configuration
K6R4008V1B-J : 36-SOJ-400
K6R4008V1B-T: 36-TSOP2-400F
K6R4008V1B-U: 44-TSOP2-400AF
Clk Gen.
I/O
1
~I/O
8
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
1024x8 Columns
I/O Circuit
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
18
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
8
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
N.C
No Connection
applications.
The
A
10
A
12
A
14
A
16
A
18
A
9
A
11
A
13
A
15
A
17
K6R4008V1B-C10/C12/C15
Commercial Temp.
K6R4008V1B-I10/I12/I15
Industrial Temp.
ORDERING INFORMATION
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R4008V1B-C15 | CMOS SRAM |
| K6R4008V1B-I10 | CMOS SRAM |
| K6R4008V1B-I12 | CMOS SRAM |
| K6R4008V1B-I15 | CMOS SRAM |
| K6R4008V1D | 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R4008V1B-C15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1B-I10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1B-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1B-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| K6R4008V1C-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. |
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