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| 型號(hào)： | K6R1016V1D |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（3.3V的）在商業(yè)和工業(yè)溫度范圍操作。 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 259K |
| 代理商： | K6R1016V1D |
K6R1016V1D
CMOS SRAM
Revision 3.0
June 2002
- 4 -
for AT&T
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to 4.6
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 4.6
V
Power Dissipation
P
d
1
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to 70
°
C)
(1) V
IH
(Max) = V
CC +
2.0V a.c(Pulse Width
≤
8ns) for I
≤
20mA
(2) V
IL
(Min) = -2.0V a.c(Pulse Width
≤
8ns) for I
≤
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3
(1)
V
Input Low Voltage
V
IL
-0.3
(2)
-
0.8
V
LB
OE
A0
A1
A2
N.C
I/O1
UB
A3
A4
CS
I/O9
I/O2
I/O3
A5
A6
I/O11
I/O10
Vss
I/O4
N.C
A7
I/O12
Vcc
Vcc
I/O5
N.C
N.C
I/O13
Vss
I/O7
I/O6
A14
A15
I/O14
I/O15
I/O8
N.C
A12
A13
WE
I/O16
N.C
A8
A9
A10
A11
N.C
1
2
3
4
5
6
A
B
C
D
E
F
G
H
48-TBGA
( Top View )
PIN CONFIGURATION
(TOP VIEW)
SOJ/
TSOP2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
15
A
14
A
13
OE
UB
LB
I/O
16
I/O
15
I/O
14
I/O
13
Vss
Vcc
I/O
12
I/O
11
I/O
10
I/O
9
N.C
A
12
A
11
A
10
A
9
N.C
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
I/O
3
I/O
4
Vcc
Vss
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
5
A
6
A
7
A
8
N.C
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1016V1D-EC08 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EC08/10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EC10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EI08 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EI08/10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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