- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374287 > K6R1008V1D-J(T)C(I)10 (SAMSUNG SEMICONDUCTOR CO. LTD.) 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. PDF資料下載
參數(shù)資料
| 型號： | K6R1008V1D-J(T)C(I)10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 在商業(yè)和工業(yè)溫度范圍運作的64Kx16位高速CMOS靜態(tài)RAM（3.3V的）。 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 181K |
| 代理商： | K6R1008V1D-J(T)C(I)10 |
K6R1008V1D
CMOS SRAM
PRELIMINARY
for AT&T
Revision 1.0
December 2001
- 6 -
Address
Data Out
Previous Valid Data
Valid Data
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
Valid Data
High-Z
t
RC
CS
Address
UB, LB
OE
Data out
t
HZ(3,4,5)
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
LZ(4,5)
t
OHZ
t
BHZ(3,4,5)
t
BLZ(4,5)
t
PU
t
PD
50%
50%
V
CC
Current
I
CC
I
SB
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1008V1D-08
K6R1008V1D-10
Unit
Min
Max
Min
Max
Write Cycle Time
t
WC
8
-
10
-
ns
Chip Select to End of Write
t
CW
6
-
7
-
ns
Address Set-up Time
t
AS
0
-
0
-
ns
Address Valid to End of Write
t
AW
6
-
7
-
ns
Write Pulse Width(OE High)
t
WP
6
-
7
-
ns
Write Pulse Width(OE Low)
t
WP1
8
-
10
-
ns
Write Recovery Time
t
WR
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
4
0
5
ns
Data to Write Time Overlap
t
DW
4
-
5
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
ns
End of Write to Output Low-Z
t
OW
3
-
3
-
ns
相關PDF資料 |
PDF描述 |
|---|---|
| K6R1016C1 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016C1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008V1D-KC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008V1D-KC08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1D-KC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008V1D-KI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1D-KI08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
發(fā)布緊急采購，3分鐘左右您將得到回復。