- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374287 > K6R1008V1D-J(T)C(I)10 (SAMSUNG SEMICONDUCTOR CO. LTD.) 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. PDF資料下載
參數(shù)資料
| 型號： | K6R1008V1D-J(T)C(I)10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 在商業(yè)和工業(yè)溫度范圍運作的64Kx16位高速CMOS靜態(tài)RAM（3.3V的）。 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 181K |
| 代理商： | K6R1008V1D-J(T)C(I)10 |
K6R1008V1D
CMOS SRAM
PRELIMINARY
for AT&T
Revision 1.0
December 2001
- 3 -
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)
GENERAL DESCRIPTION
The K6R1008V1D is a 1,048,576-bit high-speed Static Random
Access Memory organized as 131,072 words by 8 bits.
The K6R1008V1D uses 8 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using
SAMSUNG
′
s advanced CMOS process and designed for
high-speed circuit technology. It is particularly well suited for
use in high-density high-speed system applications.
The K6R1008V1D is packaged in a 400mil 32-pin plastic SOJ
or TSOP2 forward.
FEATURES
Fast Access Time 8,10ns(Max.)
Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R1008V1D-08: 80mA(Max.)
K6R1008V1D-10: 65mA(Max.)
Single 3.3
±
0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration
K6R1008V1D-J : 32-SOJ-400
K6R1008V1D-T : 32-TSOP2-400CF
Operating in Commercial and Industrial Temperature range.
Clk Gen.
I/O
1
~I/O
8
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
256x8 Columns
I/O Circuit
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
16
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
8
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
N.C
No Connection
PIN CONFIGURATION
(Top View)
SOJ/
TSOP2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
16
A
15
A
14
A
13
OE
I/O
8
I/O
7
Vss
Vcc
I/O
6
I/O
5
A
12
A
11
A
10
A
9
A
8
A
0
A
1
A
2
A
3
CS
I/O
1
I/O
2
Vcc
Vss
I/O
3
I/O
4
WE
A
4
A
5
A
6
A
7
A
10
A
11
A
12
A
13
A
14
A
15
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1016C1 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016C1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008V1D-KC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008V1D-KC08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1D-KC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008V1D-KI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008V1D-KI08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
發(fā)布緊急采購，3分鐘左右您將得到回復。