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參數資料
| 型號： | K6R1008V1B-B-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| 中文描述： | 128Kx8位高速靜態(tài)RAM（3.3V的工作），革命銷出。在商用和工業(yè)溫度范圍運營 |
| 文件頁數： | 9/9頁 |
| 文件大小： | 184K |
| 代理商： | K6R1008V1B-B-L |
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
CMOS SRAM
PRPreliminary
Rev 2.1
- 9 -
August 1998
#1
32-SOJ-400
#32
20.95
±
0.12
0.825
±
0.005
1
0
-0.05
-0.002
MAX
21.36
0.841
0.20
0.008
9.40
±
0.25
0.370
±
0.010
MAX
0.148
3.76
MIN
0.69
0.027
( 0.051
( 0.051
( 0.0375
-0.05
-0.002
0.43
0.017
-0.05
-0.002
0.71
0.028
1.27
0.050
#16
#17
0.10 MAX
11.18
±
0.12
0.440
±
0.005
PACKAGE DIMENSIONS
Units:millimeters/Inches
32-TSOP2-400CF
#32
20.95
±
0.10
0.825
±
0.004
MAX
21.35
0.841
MAX
1.00
±
0.10
0.039
±
0.004
1.20
0.047
MIN
0.002
0.05
0.004 MAX
0.10 MAX
#1
( 0.037
1
0
0.15
+0.10
0.006
+0.004
11.76
±
0.20
0.463
±
0.008
#17
#16
( 0.020
0.45 ~0.75
0.018 ~ 0.030
( 0.010
1.27
0.050
0.40
±
0.10
0.016
±
0.004
0~8
°
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相關代理商/技術參數 |
參數描述 |
|---|---|
| K6R1008V1B-B-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
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