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參數(shù)資料
| 型號： | K6R1008V1B-B-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| 中文描述： | 128Kx8位高速靜態(tài)RAM（3.3V的工作），革命銷出。在商用和工業(yè)溫度范圍運營 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 184K |
| 代理商： | K6R1008V1B-B-L |
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
CMOS SRAM
PRPreliminary
Rev 2.1
- 8 -
August 1998
FUNCTIONAL DESCRIPTION
* X means Don
′
t Care.
CS
WE
OE
Mode
I/O Pin
Supply Current
H
X
X*
Not Select
High-Z
I
SB
, I
SB1
L
H
H
Output Disable
High-Z
I
CC
L
H
L
Read
D
OUT
I
CC
L
L
X
Write
D
IN
I
CC
DATA RETENTION CHARACTERISTICS*
(T
A
=0 to 70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
CC
for Data Retention
V
DR
CS
≥
V
CC
-0.2V
V
CC
=3.0V, CS
≥
V
CC
-0.2V
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
2.0
-
3.6
V
Data Retention Current
I
DR
-
-
0.5
mA
V
CC
=2.0V, CS
≥
V
CC
-0.2V
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
-
-
0.4
Data Retention Set-Up Time
t
SDR
See Data Retention
Wave form(below)
0
-
-
ns
Recovery Time
t
RDR
5
-
-
ms
DATA RETENTION WAVE FORM
V
CC
3.0V
V
IH
V
DR
CS
GND
Data Retention Mode
CS
≥
V
CC
- 0.2V
t
SDR
t
RDR
CS controlled
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008V1B-B-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
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