- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374287 > K6R1008C1D (SAMSUNG SEMICONDUCTOR CO. LTD.) 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. PDF資料下載
參數(shù)資料
| 型號： | K6R1008C1D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（3.3V的）在商業(yè)和工業(yè)溫度范圍操作。 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 259K |
| 代理商： | K6R1008C1D |
K6R1016V1D
CMOS SRAM
Revision 3.0
June 2002
- 6 -
for AT&T
Address
Data Out
Previous Valid Data
Valid Data
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB, LB=V
IL
)
t
AA
t
RC
t
OH
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016V1D-08
K6R1016V1D-10
Unit
Min
Max
Min
Max
Read Cycle Time
t
RC
8
-
10
-
ns
Address Access Time
t
AA
-
8
-
10
ns
Chip Select to Output
t
CO
-
8
-
10
ns
Output Enable to Valid Output
t
OE
-
4
-
5
ns
UB, LB Access Time
t
BA
-
4
-
5
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
4
0
5
ns
Output Disable to High-Z Output
t
OHZ
0
4
0
5
ns
UB, LB Disable to High-Z Output
t
BHZ
0
4
0
5
ns
Output Hold from Address Change
t
OH
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
8
-
10
ns
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016V1D-08
K6R1016V1D-10
Unit
Min
Max
Min
Max
Write Cycle Time
t
WC
8
-
10
-
ns
Chip Select to End of Write
t
CW
6
-
7
-
ns
Address Set-up Time
t
AS
0
-
0
-
ns
Address Valid to End of Write
t
AW
6
-
7
-
ns
Write Pulse Width(OE High)
t
WP
6
-
7
-
ns
Write Pulse Width(OE Low)
t
WP1
8
-
10
-
ns
UB, LB Valid to End of Write
t
BW
6
-
7
-
ns
Write Recovery Time
t
WR
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
4
0
5
ns
Data to Write Time Overlap
t
DW
4
-
5
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
ns
End of Write to Output Low-Z
t
OW
3
-
3
-
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1016V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C12 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C15 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C20 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008C1D-J(T)C(I)10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-J(T)C(I)12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-JC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-JI10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-JTCI10/12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。