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參數(shù)資料
| 型號： | K6R1008C1D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（3.3V的）在商業(yè)和工業(yè)溫度范圍操作。 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 259K |
| 代理商： | K6R1008C1D |
K6R1016V1D
CMOS SRAM
Revision 3.0
June 2002
- 3 -
for AT&T
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
Fast Access Time 8,10ns(Max.)
Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating
K6R1016V1D- 08: 80mA(Max.)
K6R1016V1D-10: 65mA(Max.)
Single 3.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Data Byte Control: LB: I/O
1
~ I/O
8
, UB: I/O
9
~ I/O
16
Standard Pin Configuration:
K6R1016V1D-J: 44-SOJ-400
K6R1016V1D-T: 44-TSOP2-400BF
K6R1016V1D-E: 48-TBGA ( 6.0mm X 7.0mm )
with 0.75mm ball pitch
Operating in Commercial and Industrial Temperature range.
The K6R1016V1D is a 1,048,576-bit high-speed Static Random
Access Memory organized as 65,536 words by 16 bits.
The K6R1016V1D uses 16 common input and output lines and
has at output enable pin which operates faster than address
access time at read cycle. Also it allows that lower and upper
byte access by data byte control (UB, LB). The device is
fabricated using SAMSUNG
′
s advanced CMOS process and
designed for high-speed circuit technology. It is particularly well
suited for use in high-density high-speed system applications.
The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ
or TSOP2 forward or 48-TBGA.
GENERAL DESCRIPTION
Clk Gen.
I/O
1
~I/O
8
OE
UB
LB
CS
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Data
Cont.
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
CLK
Gen
.
Pre-Charge Circuit
Memory Array
512 Rows
128x16 Columns
I/O Circuit &
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
9
~I/O
16
WE
A
9
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
15
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
LB
Lower-byte Control(I/O
1
~I/O
8
)
UB
Upper-byte Control(I/O
9
~I/O
16
)
I/O
1
~ I/O
16
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
N.C
No Connection
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PDF描述 |
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| K6R1016V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C10 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C12 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C15 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1C-C20 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008C1D-J(T)C(I)10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-J(T)C(I)12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-JC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-JI10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-JTCI10/12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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