參數(shù)資料
型號： K6R1004V1C-P12
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
中文描述： 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（3.3V的）。
文件頁數(shù)： 5/9頁
文件大?。?/td> 137K
代理商： K6R1004V1C-P12
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 5 -
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
CS
Address
OE
Data ou
t
t
AA
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
RC
t
OE
t
CO
t
PU
t
PD
t
HZ(3,4,5)
50%
50%
V
CC
Current
I
CC
I
SB
Valid Data
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Sym-
bol
K6R1004V1C-10
K6R1004V1C-12
K6R1004V1C-15
K6R1004V1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
10
-
12
-
15
-
20
-
ns
Chip Select to End of Write
t
CW
7
-
-
10
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE High)
t
WP
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE Low)
t
WP1
10
-
12
-
15
-
20
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
5
0
6
0
7
0
9
ns
Data to Write Time Overlap
t
DW
5
-
6
-
7
-
8
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
3
-
ns
相關(guān)PDF資料
PDF描述
K6R1004V1C-P15 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1D 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008V1B 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-B-L 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-B-P 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1004V1C-P15 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-P20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1004V1D-JC(I)08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1004V1D-JC(I)10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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