- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄224103 > K6R1004C1C (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). PDF資料下載
參數(shù)資料
| 型號(hào)： | K6R1004C1C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（5.0V操作）。 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | K6R1004C1C |
PRELIMINARY
Revision 2.0
- 6 -
April 2000
CCPCCCRCELIMINARY
Preliminary
PRELIMINARY
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
CMOS SRAM
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or
VOL levels.
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.
5. Transition is measured
±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
Address
CS
tWP(2)
tDW
tDH
Valid Data
WE
Data in
Data out
tWC
tWR(5)
tAW
tCW(3)
High-Z(8)
High-Z
OE
tOHZ(6)
tAS(4)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
Address
CS
tWP1(2)
tDW
tDH
tOW
tWHZ(6)
Valid Data
WE
Data in
Data out
tWC
tAS(4)
tWR(5)
tAW
tCW(3)
(10)
(9)
High-Z(8)
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1004C1C-I | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I12 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I15 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I20 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1004C1C-C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-C10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-C12 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-C15 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-C20 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。