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參數(shù)資料
| 型號(hào)： | K6F8016V3A-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 為512k x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | K6F8016V3A-F |
K6F8016V3A Family
Revision 1.0
September 2001
3
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K6F8016V3A-TF55
K6F8016V3A-TF70
K6F8016V3A-RF55
K6F8016V3A-RF70
44-TSOP2-F, 55ns, 3.3V
44-TSOP2-F, 70ns, 3.3V
44-TSOP2-R, 55ns, 3.3V
44-TSOP2-R, 70ns, 3.3V
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.2 to V
CC
+0.3V(max.4.0V)
V
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 4.0
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
°
C
Operating Temperature
T
A
-40 to 85
FUNCTIONAL DESCRIPTION
Note : X means don
′
t care. (Must be low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
X
X
X
High-Z
High-Z
Deselected
Standby
L
H
H
X
X
High-Z
High-Z
Output Disabled
Active
L
X
X
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
L
L
L
Din
Din
Word Write
Active
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