- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373072 > K6F8016V3A-F (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號： | K6F8016V3A-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 為512k x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 146K |
| 代理商： | K6F8016V3A-F |
K6F8016V3A Family
Revision 1.0
September 2001
2
CMOS SRAM
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F8016V3A families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
various operating temperature ranges. The families also sup-
port low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 3.0~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 44-TSOP2-400F/R
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical values are measured at V
CC
=3.3V, T
A
=25
°
C and not 100% tested.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
0.5
μ
A
2)
Operating
(I
CC1
, Max)
4mA
K6F8016V3A-F
Industrial(-40~85
°
C)
3.0~3.6V
55
1)
/70ns
44-TSOP2-400F/R
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
1024 rows
512
×
16 columns
I/O Circuit
Column select
PIN DESCRIPTION
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
18
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A18
A17
A16
A15
A14
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
A8
A9
A10
A11
A12
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
A8
A9
A10
A11
A12
A13
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A13
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A18
A17
A16
A15
A14
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1008C1A- | 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C10 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C12 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C8 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1C- | 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6-KPE350 | 制造商:Kingstate Electronics Corporation 功能描述:PIEZO ALARM CONT TONE |
| K6L0908C2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
| K6L0908C2A-GB55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。