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參數(shù)資料
| 型號(hào)： | K6F4016U4G-EF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 256Kx16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 173K |
| 代理商： | K6F4016U4G-EF70 |
Revision 0.0
October 2003
CMOS SRAM
K6F4016U4G Family
- 4 -
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Industrial Product: T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+2.0V in case of pulse width
≤
20ns.
3. Undershoot: -2.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
3.0
3.3
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
Vcc+0.3
2)
V
Input low voltage
V
IL
-0.3
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. Typical values are measured at V
CC
=3.0V, T
A
=25
°
C and not 100% tested.
Item
Symbol
Test Conditions
Min
Typ
1)
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
-1
-
1
μ
A
Average operating current
I
CC1
Cycle time=1
μ
s, 100%duty, I
IO
=0mA, CS
≤
0.2V,
LB
≤
0.2V or/and UB
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-0.2V
-
-
4
mA
I
CC2
Cycle time=Min, I
IO
=0mA, 100% duty, CS=V
IL
,
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IL
or V
IH
70ns
-
-
22
mA
55ns
-
-
27
Output low voltage
V
OL
I
OL
= 2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
= -1.0mA
2.4
-
-
V
Standby Current (CMOS)
I
SB1
Other input =0~Vcc
1) CS
≥
Vcc-0.2V(CS controlled) or
2) LB=UB
≥
Vcc-0.2V, CS
≤
0.2V(LB/UB controlled)
-
3
10
μ
A
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