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參數(shù)資料
| 型號： | K6F4016U4G-EF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 256Kx16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 173K |
| 代理商： | K6F4016U4G-EF70 |
Revision 0.0
October 2003
CMOS SRAM
K6F4016U4G Family
- 3 -
Preliminary
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted within recommended operating condition. Exposure to absolute maximum rating conditions for extended period may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.3 to V
CC
+0.3V(Max. 3.6V)
V
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 3.6
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
°
C
Operating Temperature
T
A
-40 to 85
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K6F4016U4G-EF55
K6F4016U4G-EF70
48-TBGA, 55ns, 3.0V
48-TBGA, 70ns, 3.0V
FUNCTIONAL DESCRIPTION
1. X means don
′
t care. (Must be low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F4016U6G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U6G-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016R6B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016R6B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016R6D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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