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參數資料
| 型號： | K6F2008T2E-YF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 256Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數： | 7/9頁 |
| 文件大?。?/td> | 134K |
| 代理商： | K6F2008T2E-YF70 |
Revision 0.0
June 2003
K6F2008T2E Family
7
CMOS SRAM
Preliminary
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
CS
1
t
WC
t
WR(4)
t
AS(3)
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
CS
2
t
CW(2)
t
WP(1)
t
AW
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
t
CW(2)
t
WR(4)
CS
2
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
WC
t
AW
t
AS(3)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| K6F2008U2E-EF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-EF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-YF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-YF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008V2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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