- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373072 > K6F2008T2E-YF70 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K6F2008T2E-YF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 256Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | K6F2008T2E-YF70 |
Revision 0.0
June 2003
K6F2008T2E Family
2
CMOS SRAM
Preliminary
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F2008T2E families are fabricated by SAMSUNG
′
s
advanced Full CMOS process technology. The families support
industrial temperature ranges for user flexibility of system
design. The families also supports low data retention voltage for
battery back-up operation with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 256Kx8
Power Supply Voltage: 2.7 ~ 3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
CS
1
, CS
2
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable
Vcc
Power
WE
Write Enable Input
Vss
Ground
A
0
~A
17
Address Inputs
DNU
Do Not Use
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical values are measured at V
CC
=3.0V, T
A
=25
°
C and not 100% tested.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ)
Operating
(I
CC1
, Max)
K6F2008T2E-F
Industrial(-40~85
°
C)
2.7~3.6V
55
1)
/70ns
0.5
μ
A
2)
3mA
32-TSOP1-0813.4F
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
256x8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A
I/O
1
Data
cont
Data
cont
I/O
8
CS1
CS2
WE
OE
Control
logic
Address
A11
A9
A8
A13
WE
CS2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-sTSOP
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6F2008T2E | 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U4G-EF55 | 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U4G-EF70 | 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U4G | 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016V3A | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F2008U2E-EF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-EF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-YF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008U2E-YF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008V2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。