參數(shù)資料
型號: K6F1616R6C-FF70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 100萬x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 9/9頁
文件大小: 153K
代理商: K6F1616R6C-FF70
K6F1616R6C Family
Revision 1.0
May 2004
9
CMOS SRAM
PACKAGE DIMENSION
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B
C
B
C
Bottom View
Top View
D
E
E
C
Side View
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
-
-
1.00
E1
0.27
-
-
Y
-
-
0.10
B1
#A1
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are
±
0.050 unless
specified beside figure.
4. Typ: Typical
5. Y is coplanarity
Unit: millimeters
48 BALL FINE PITCH BGA(0.75mm ball pitch)
E
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參數(shù)描述
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K6F1616T6B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM