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參數(shù)資料
| 型號： | K6F1616R6C-FF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 153K |
| 代理商： | K6F1616R6C-FF70 |
K6F1616R6C Family
Revision 1.0
May 2004
7
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AS(3)
CS
1
CS
2
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
Data Undefined
UB, LB
WE
Data in
Data out
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
High-Z
High-Z
Data Valid
CS
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1616R6C-XF70000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 1.8V 16M-Bit 1M x 16 70ns 48-Pin FBGA Tray |
| K6F1616T6B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-EF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-EF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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