參數(shù)資料
型號： K5A3280YBC-T755
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁數(shù)： 16/45頁
文件大?。?/td> 625K
代理商： K5A3280YBC-T755
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 16 -
Preliminary
Figure 9. Block Group Protection & Unprotection Algorithms
NOTE:
All blocks must be protected before unprotect operation is executing.
Block Protect
Algorithm
Set up Block Group
address
Block Group Protect:
Write 60H to Block
Group address with
A6=0,A1=1
A0=0
Wait 150
μ
s
Verify Block Group
Protect:Write 40H to
Block Group address
with A6=0,
A1=1,A0=0
Read from
Block Group address
with A6=0,
A1=1,A0=0
Data=01h
Protect another
Block Group
Remove V
ID
from RESET
Write RESET
command
END
Wait 1
μ
s
First Write
Cycle=60h
Temporary Block Group
Unprotect Mode
Block Group Unprotect
Write 60H
with
A6=1,A1=1
A0=0
Wait 15ms
Verify Block Group
Unprotect:Write 40H to
Block Group address
with A6=1,
A1=1,A0=0
Read from
Block Group address
with A6=1,
A1=1,A0=0
Data=00h
Last Block Group
verified
Remove V
ID
from RESET
Write RESET
command
END
No
Increment
COUNT
COUNT
=1000
Device failed
No
Yes
Yes
No
No
Yes
Algorithm
Increment
COUNT
COUNT
=25
Device failed
No
Yes
No
All Block Groups
Protected
No
Block Group <i>, i= 0
START
COUNT = 1
RESET=V
ID
Yes
Yes
Yes
No
Block Group
Protection
Yes
No
Yes
Set up next Block
Group address
Reset
COUNT=1
Block Unprotect
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