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參數(shù)資料
| 型號： | K4S561632E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die SDRAM Specification |
| 中文描述： | 256Mb的電子芯片內存規(guī)格 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 196K |
| 代理商： | K4S561632E |
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.5 May 2004
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
75
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4banks Activated.
t
CCD
= 2CLKs
80
mA
1
Precharge standby current in
power-down mode
I
CC2
P
I
CC2
PS
2
2
mA
Precharge standby current in
non power-down mode
I
CC2
N
20
mA
I
CC2
NS
10
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
6
6
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
25
mA
I
CC3
NS
25
mA
Operating current
(Burst mode)
I
CC4
100
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
180
3
1.5
mA
mA
mA
2
3
4
Self refresh current
I
CC6
CKE
≤
0.2V
C
L
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S5604(08)32E-TC
4. K4S5604(08)32E-TL
5. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Notes :
DC CHARACTERISTICS (x4, x8)
相關PDF資料 |
PDF描述 |
|---|---|
| K4S561632E-TL60 | 256Mb E-die SDRAM Specification |
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| K4S561633F-C | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S561633F-E | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S561632E-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
| K4S561632E-TC75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S561632E-TC75T00 | 制造商:Samsung SDI 功能描述:PN may be NE |
| K4S561632E-TL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
| K4S561632E-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
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