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參數資料
| 型號： | K4S510832B-TCL75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb B-die SDRAM Specification |
| 中文描述： | 512MB的乙芯片內存規(guī)格 |
| 文件頁數： | 7/15頁 |
| 文件大?。?/td> | 149K |
| 代理商： | K4S510832B-TCL75 |
CMOS SDRAM
SDRAM 512Mb B-die (x4, x8, x16)
Rev. 1.1 February 2004
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
Unit
V
V
°
C
W
Storage temperature
Power dissipation
T
STG
P
D
-55 ~ +150
1
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Supply voltage
Symbol
V
DD
, V
DDQ
Min
3.0
Typ
3.3
Max
3.6
Unit
V
Note
Input logic high voltage
Input logic low voltage
V
IH
V
IL
2.0
-0.3
3.0
0
V
DD
+0.3
0.8
V
V
1
2
Output logic high voltage
Output logic low voltage
V
OH
V
OL
2.4
-
-
-
-
V
V
I
OH
= -2mA
I
OL
= 2mA
0.4
Input leakage current
I
LI
-10
-
10
uA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Pin
Symbol
C
CLK
Min
2.5
Max
3.5
Unit
pF
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
C
IN
C
ADD
2.5
2.5
3.8
3.8
pF
pF
(x4 : DQ
0
~ DQ
3
), (x8 : DQ
0
~ DQ
7
), (x16 : DQ
0
~ DQ
15
)
C
OUT
4.0
6.0
pF
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