參數(shù)資料
型號: K4S161622E-TC80
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 16 SDRAM
中文描述: 100萬× 16內(nèi)存
文件頁數(shù): 35/42頁
文件大?。?/td> 675K
代理商: K4S161622E-TC80
CMOS SDRAM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
K4S161622E
Rev 0.2 Oct. '02
Clock Suspension & DQM Operation Cycle @CAS Latency=2, Burst Length=4
Row Active
Clock
Suspension
Read
Write
DQM
: Don't care
Clock
Suspension
Read
*Note 1
tSHZ
tSHZ
Write
DQM
Write
Read DQM
*Note :
1. DQM is needed to prevent bus contention.
BA
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
A
10
/AP
Ra
Ca
Cb
Cc
Dc2
Dc0
Qb1
Qb0
Qa3
Qa2
Qa1
Qa0
Ra
相關PDF資料
PDF描述
K4S161622H 16Mb H-die SDRAM Specification
K4S161622H-TC55 16Mb H-die SDRAM Specification
K4S161622H-TC60 16Mb H-die SDRAM Specification
K4S161622H-TC70 16Mb H-die SDRAM Specification
K4S161622H-TC80 16Mb H-die SDRAM Specification
相關代理商/技術參數(shù)
參數(shù)描述
K4S161622H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification
K4S161622H-TC55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification
K4S161622HTC60 制造商:SAMSUNG 功能描述:New
K4S161622H-TC60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification
K4S161622H-TC70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mb H-die SDRAM Specification