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參數(shù)資料
| 型號： | K4D623238B-GC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Mbit DDR SDRAM |
| 中文描述： | 64Mb的DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大小： | 147K |
| 代理商： | K4D623238B-GC |
64M DDR SDRAM
K4D623238B-GC
- 2 -
Rev. 1.4 (Sep. 2002)
Revision History
Revision 1.4 (September 26, 2002)
Added tCK(min) and tCK(max) at CL=3 and CL=4
Revision 1.3 (March 5, 2002)
Changed tCK(max) of K4D623238B-GC40 from 7ns to 10ns.
Revision 1.2 (September 1, 2001)
Added K4D623238B-GL* as a low power part (ICC6=1mA)
Added ICC7 (Operating current at 4bank interleaving)
Added 100MHz@CL2
Revision 1.1 (August 2, 2001)
Changed tCK(max) of K4D623238B-GC45/-50/-55/-60 from 7ns to 10ns.
Revision 1.0 (June 22, 2001)
Changed VDD/VDDQ of K4D623238B-GC33 from 2.5V to 2.8V.
Revision 0.4 (April 10,2001)
- Preliminary Spec
Added K4D623238B-GC50
Added K4D623238B-GC55
Added K4D623238B-GC60
Defined tWR_A that means write recovery time @ Auto precharge.
Revision 0.3 (February 10, 2001)
- Preliminary
Changed tDAL of K4D623238B-GC45 from 6tCK to 7tCK.
Revision 0.2 (December 13, 2000) -
Target Spec
Defined Target Specification
Revision 0.0 (November 21, 2000)
相關(guān)PDF資料 |
PDF描述 |
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| K4D64163HF | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC33 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC36 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC40 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D64163HF-TC50 | 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D623238B-GC/L33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
| K4D623238B-GC/L55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM |
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