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參數(shù)資料
| 型號(hào)： | K4C561638C-TCDA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb Network-DRAM |
| 中文描述： | 256Mb的網(wǎng)絡(luò)內(nèi)存 |
| 文件頁(yè)數(shù)： | 21/42頁(yè) |
| 文件大小： | 880K |
| 代理商： | K4C561638C-TCDA |
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K4C5608/1638C 256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 21 -
Function Truth Table (Continued)
Auto-Refresh Command Table
Function
Command
(Symbol)
Current
State
PD
CS
FN
BA1-BA0 A14-A9
A8
A7
A6-A0
Notes
n-1
n
Active
WRA(1st)
Standby
H
H
L
L
X
X
X
X
X
Auto-Refresh
REF(2nd)
Active
H
H
L
X
X
X
X
X
X
Self-Refresh Command Table
Function
Command
(Symbol)
Current
State
PD
CS
FN
BA1-BA0 A14-A9
A8
A7
A6-A0
Notes
n-1
n
Active
WRA(1st)
Standby
H
H
L
L
X
X
X
X
X
Self-Refresh Entry
REF(2nd)
Active
H
L
L
X
X
X
X
X
X
9, 10
Self-Refresh Continue
-
Self-Refresh
L
L
X
X
X
X
X
X
X
Self-Refresh Exit
SELFX
Self-Refresh
L
H
H
X
X
X
X
X
X
11
Power Down Table
Notes :
9. PD has to be brought to Low within t
FPDL
from REF command.
10. PD should be brought to Low after DQ’s state turned high impedance.
11. When PD is brought to High from Low, this function is executed asynchronously.
Function
Command
(Symbol)
Current
State
PD
CS
FN
BA1-BA0 A14-A9
A8
A7
A6-A0 Notes
n-1
n
Power Down Entry
PDEN
Standby
H
L
H
X
X
X
X
X
X
10
Power Down Continue
-
Power Down
L
L
X
X
X
X
X
X
X
Power Down Exit
PDEX
Power Down
L
H
H
X
X
X
X
X
X
11
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