參數(shù)資料
型號(hào): K3N7C1000M-TC15
元件分類(lèi): PROM
英文描述: 4M X 16 MASK PROM, 150 ns, PDSO44
封裝: 0.400 INCH, TSOP2-44
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 71K
代理商: K3N7C1000M-TC15
K3N7C1000M-TC
CMOS MASK ROM
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to V
SS,
T
A
=
0
to 70
°
C
)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Supply Voltage
V
SS
0
0
0
V
MODE SELECTION
CE
OE
BHE
Q
15
/A
-1
Mode
Data
Power
H
X
X
X
Standby
High-Z
Standby
L
H
X
X
Operating
High-Z
Active
L
L
H
Output
Operating
Q
0
~Q
15
: Dout
Active
L
Input
Operating
Q
0
~Q
7
: Dout
Q
8
~Q
14
: High-Z
Active
CAPACITANCE
(T
A
=25
°
C, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Conditions
Min
Max
Unit
Output Capacitance
C
OUT
V
OUT
=0V
-
12
pF
Input Capacitance
C
IN
V
IN
=0V
-
12
pF
ABSOLUTE MAXIMUM RATINGS
NOTE
: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Item
Symbol
Rating
Unit
Remark
Voltage on Any Pin Relative to V
SS
V
IN
-0.3 to +4.5
V
-
Temperature Under Bias
T
BIAS
-10 to +85
°
C
°
C
-
Storage Temperature
T
STG
-55 to +150
-
DC CHARACTERISTICS
NOTE
: Minimum DC Voltage(V
IL
) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(V
IH
) is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Operating Current
I
CC
CE=OE=V
IL
, all outputs open
-
70
mA
Standby Current(TTL)
I
SB1
CE=V
IH
, all outputs open
-
1
mA
Standby Current(CMOS)
I
SB2
CE=V
CC
, all outputs open
-
50
μ
A
μ
A
μ
A
Input Leakage Current
I
LI
V
IN
=0 to V
CC
-
10
Output Leakage Current
I
LO
V
OUT
=0 to V
CC
-
10
Input High Voltage, All Inputs
V
IH
2.2
V
CC
+0.3
V
Input Low Voltage, All Inputs
V
IL
-0.3
0.8
V
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
V
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
0.4
V
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