參數(shù)資料
型號： JDV2S26FS
元件分類： 變?nèi)荻O管
英文描述： UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
封裝： LEAD FREE, FSC, 1-1L1A, 2 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 221K
代理商： JDV2S26FS
JDV2S26FS
2005-11-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S26FS
VCO for UHF Band Radio
High capacitance ratio: C1V/C4V =2.9 (typ.)
Low series resistance: rs = 0.4 (typ.)
This device is suitable for use in small tuners.
Lead (Pb)-free.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
15.35
16.31
Capacitance
C4V
VR = 4 V, f = 1 MHz
5.27
5.6
pF
Capacitance ratio
C1V/C4V
2.82
3
Series resistance
rs
VR = 1 V, f = 470 MHz
0.4
0.55
Note: Signal level when capacitance is measured. Vsig = 100mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0.
8±
0
.05
0.2
1.
0
±
0
.05
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
fSC
相關(guān)PDF資料
PDF描述
JDV2S26SC UHF BAND, 15.81 pF, SILICON, VARIABLE CAPACITANCE DIODE
JDV2S26SC UHF BAND, 10 V, SILICON, VARIABLE CAPACITANCE DIODE
JDV2S27FS UHF BAND, 8.31 pF, SILICON, VARIABLE CAPACITANCE DIODE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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JDV2S26FSTPL3 制造商:Toshiba America Electronic Components 功能描述:JDV2S26FS(TPL3), DIODE
JDV2S28FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type
JDV2S29FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VCO for UHF Band Radio
JDV2S29FS(TPL3) 功能描述:變?nèi)荻O管 LOGIC VARACTOR Pb-F FSC VC RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel
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