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參數(shù)資料
| 型號： | JDV2S26SC |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | ROHS COMPLIANT, SC2, 1-1R1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 109K |
| 代理商： | JDV2S26SC |
JDV2S26SC
2009-11-18
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S26SC
VCO for UHF Band Radio
High Capacitance Ratio : C1V/C4V = 2.9 (typ.)
Low Series Resistance : rs = 0.36 ohm (typ.)
A two-terminal ultra-small package supports high-density mounting and
the downsizing of end products.
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
15.33
16.29
Capacitance
C4V
VR = 4V, f = 1 MHz
5.25
5.58
pF
Capacitance ratio
C1V/C4V
2.83
3.01
Series resistance
rs
VR = 1 V, f = 470 MHz
0.36
0.51
Ω
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
0.62±
0.03
0.19±
0.02
0.3±
0.03
0.32±0.03
0.38
0.19±
0.02
0.27±0.02
0.025±0.015
0.025±
0.015
１：カソード
２：アノード
１
２
1. Cathode
2. Anode
JEDEC
JEITA
TOSHIBA
1-1R1A
Weight: 0.00017 g (typ.)
]
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55 to 150
°C
2
1
SC2
BOTTOM VIEW
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| JDV2S28FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon Epitaxial Planar Type |
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